
N-Channel PowerTrench® MOSFET featuring 100V drain-source breakdown voltage and 4.5A continuous drain current. Offers a low 60mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. This surface-mount SOIC package component operates from -55°C to 150°C with a 2.5W maximum power dissipation. Includes fast switching characteristics with 9.8ns turn-on and 26ns fall times.
Onsemi FDS3692 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 60MR |
| Dual Supply Voltage | 100V |
| Element Configuration | Single |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 746pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 9.8ns |
| DC Rated Voltage | 100V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS3692 to view detailed technical specifications.
No datasheet is available for this part.
