P-Channel MOSFET, surface mount, SOIC package. Features -30V drain-source breakdown voltage, -8.8A continuous drain current, and 20mΩ maximum drain-source on-resistance. Operates from -55°C to 150°C with 2.5W maximum power dissipation. Includes 1.845nF input capacitance and 38ns fall time. Packaged on a 2500-piece tape and reel.
PackageSOIC
Current Rating-8.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4435BZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.8A |
| Current Rating | -8.8A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20MR |
| Element Configuration | Single |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 1.845nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -2.1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -2.1V |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -30V |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4435BZ Datasheet
Download the complete datasheet for Onsemi FDS4435BZ to view detailed technical specifications.
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