N-Channel Silicon Metal-Oxide Semiconductor FET for surface mount applications. Features a continuous drain current of 7.9A and a drain-to-source breakdown voltage of 30V. Offers a low on-resistance of 22mR and a maximum power dissipation of 2.5W. Operates across a wide temperature range from -55°C to 175°C. This component is RoHS compliant and lead-free.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.9A |
| Current Rating | 7.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 927pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7.4ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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