PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS4559-F085 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 12ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Turn-Off Delay Time | 19ns |
| Weight | 0.2304g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4559-F085 Datasheet
Download the complete datasheet for Onsemi FDS4559-F085 to view detailed technical specifications.
No datasheet is available for this part.