Dual N and P-Channel MOSFET for power applications. Features 40V drain-source breakdown voltage and 26mΩ maximum drain-source on-resistance. Operates with a 20V gate-to-source voltage and offers a 2W power dissipation. Surface mountable in an SOIC package, this component is RoHS compliant and supplied on a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Onsemi FDS4897AC technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 26MR |
| Fall Time | 3ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 1.055nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 26mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.187g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4897AC Datasheet
Download the complete datasheet for Onsemi FDS4897AC to view detailed technical specifications.
No datasheet is available for this part.
Product Images
