
Dual N & P-Channel MOSFET, 40V Drain to Source Breakdown Voltage, 29mR Max Drain to Source On Resistance. Features 4.4A Continuous Drain Current, 1.9V Threshold Voltage, and 760pF Input Capacitance. Operates from -55°C to 150°C with 2W Power Dissipation. Surface mount SOIC package, 2500 units per tape and reel. RoHS compliant.
Onsemi FDS4897C technical specifications.
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