Dual N & P-Channel MOSFET, 40V Drain to Source Breakdown Voltage, 29mR Max Drain to Source On Resistance. Features 4.4A Continuous Drain Current, 1.9V Threshold Voltage, and 760pF Input Capacitance. Operates from -55°C to 150°C with 2W Power Dissipation. Surface mount SOIC package, 2500 units per tape and reel. RoHS compliant.
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Onsemi FDS4897C technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 29MR |
| Fall Time | 18ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 760pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 45ns |
| Weight | 0.187g |
| Width | 4mm |
| RoHS | Compliant |
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