Dual N & P-Channel MOSFET, 40V Drain to Source Breakdown Voltage, 29mR Max Drain to Source On Resistance. Features 4.4A Continuous Drain Current, 1.9V Threshold Voltage, and 760pF Input Capacitance. Operates from -55°C to 150°C with 2W Power Dissipation. Surface mount SOIC package, 2500 units per tape and reel. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS4897C technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.4A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
29MR
Fall Time
18ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
760pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
29mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.9V
Turn-Off Delay Time
45ns
Weight
0.187g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS4897C Datasheet
Download the complete datasheet for Onsemi FDS4897C to view detailed technical specifications.
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