P-channel MOSFET, 30V drain-source breakdown voltage, 7A continuous drain current, and 23mΩ Rds On. Features include a 1.233nF input capacitance, 25ns fall time, and 48ns turn-off delay time. This surface-mount device is housed in an 8-SOIC package, operates from -55°C to 175°C, and offers 2W power dissipation. It is RoHS compliant and lead-free, supplied in tape and reel packaging.
PackageSOIC
Voltage30V
Current7A
Current Rating-7A
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Technical Specifications
Onsemi FDS4935 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current | 7A |
| Current Rating | -7A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.233nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 48ns |
| Voltage | 30V |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4935 Datasheet
Download the complete datasheet for Onsemi FDS4935 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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