P-channel MOSFET transistor, dual element configuration, designed for surface mount applications in an 8-pin SOIC package. Features a continuous drain current of 6.9A and a drain-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 18mR at a nominal gate-source voltage of 1.9V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay time of 12ns and fall time of 13ns.
PackageSOIC
Current Rating-6.9A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4935BZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.9A |
| Current Rating | -6.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22MR |
| Dual Supply Voltage | -30V |
| Element Configuration | Dual |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 1.36nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -30V |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4935BZ Datasheet
Download the complete datasheet for Onsemi FDS4935BZ to view detailed technical specifications.
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