N-channel MOSFET for surface mount applications, featuring a 20V drain-to-source breakdown voltage and a continuous drain current of 23A. This component offers a low Rds On of 3.4mR at a nominal Vgs of 600mV, with a maximum power dissipation of 3W. It operates within a temperature range of -55°C to 150°C and is packaged in an 8-SOIC case. Key electrical characteristics include a 7.191nF input capacitance and fall/turn-off delay times of 77ns and 153ns respectively. This RoHS compliant device is supplied on tape and reel.
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Onsemi FDS6064N3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 23A |
| Current Rating | 23A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 3.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 77ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 7.191nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 153ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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