
N-Channel MOSFET for fast switching applications. Features 30V drain-source breakdown voltage and 13A continuous drain current. Offers low 7.4mΩ drain-source on-resistance at a nominal 1.7V gate-source voltage. Packaged in SOIC for surface mounting, with a maximum power dissipation of 3W and operating temperatures from -55°C to 150°C. Includes fast switching times with a 7ns fall time and 11ns turn-on delay.
Onsemi FDS6298 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 15MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.108nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 30V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS6298 to view detailed technical specifications.
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