N-channel MOSFET with 30V drain-source breakdown voltage and 21A continuous drain current. Features low 3.9mΩ Rds On, 3W maximum power dissipation, and fast switching times with 12ns turn-on and 60ns turn-off delays. Packaged in a surface-mount SOIC case, this component offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
PackageSOIC
Current Rating21A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6299S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 3.88nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 3.9mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6299S Datasheet
Download the complete datasheet for Onsemi FDS6299S to view detailed technical specifications.
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