Single P-Channel Logic Level MOSFET, designed for surface mount applications. Features a -30V drain-source breakdown voltage and a continuous drain current of 11A. Offers a low drain-source on-resistance of 14mΩ at a nominal gate-source voltage of -1.7V. This component boasts fast switching speeds with a turn-on delay time of 12ns and a fall time of 100ns. Packaged in SOIC for tape and reel, it operates within a temperature range of -55°C to 150°C.
PackageSOIC
Current Rating-11A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS6675 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Current Rating
-11A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
14mR
Dual Supply Voltage
-30V
Element Configuration
Single
Fall Time
100ns
Gate to Source Voltage (Vgs)
20V
Height
1.75mm
Input Capacitance
3nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.7V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-1.7V
Turn-Off Delay Time
50ns
Turn-On Delay Time
12ns
DC Rated Voltage
-30V
Weight
0.13g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6675 Datasheet
Download the complete datasheet for Onsemi FDS6675 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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