The FDS6680S is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a continuous drain current of 11.5A. The device features a drain to source breakdown voltage of 30V and a drain to source resistance of 11mR. It is lead free and packaged in a tape and reel format with 2500 devices per reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6680S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.01nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 11mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 34ns |
| Weight | 0.13g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6680S Datasheet
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