P-Channel MOSFET, Surface Mount, SOIC package. Features 30V drain-source voltage, 20A continuous drain current, and low 4.6mΩ drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 20ns turn-on delay and 660ns turn-off delay. RoHS compliant and lead-free.
Sign in to ask questions about the Onsemi FDS6681Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDS6681Z technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 20A |
| Current Rating | -20A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.6MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 380ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 7.54nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 660ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -30V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS6681Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
