ONSEMI

FDS6699S

Datasheet

N-Channel JFET, 30V, 21A, 3.6mR, SOIC, Surface Mount

Onsemi

FDS6699S

Name: FDS6699S Onsemi
Brand: Onsemi
SKU: FDS6699S

N-Channel JFET, 30V, 21A, 3.6mR, SOIC, Surface Mount

N-Channel PowerTrench® SyncFET™ MOSFET, a single-element junction field-effect transistor, offers a 30V drain-source breakdown voltage and a continuous drain current of 21A. Featuring a low 3.6mΩ drain-source on-resistance, this surface-mount device operates within a -55°C to 150°C temperature range. It boasts a maximum power dissipation of 2.5W and is supplied in a SOIC package on a 2500-piece tape and reel. Key electrical characteristics include a 1.4V nominal gate-source threshold voltage, 3.61nF input capacitance, and fast switching times with a 11ns turn-on delay.

PackageSOIC

Current Rating21A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FDS6699S technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	21A
Current Rating	21A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	3.6mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	3.6MR
Dual Supply Voltage	30V
Element Configuration	Single
Fall Time	38ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	3.61nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Nominal Vgs	1.4V
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	3.6mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®, SyncFET™
Termination	SMD/SMT
Threshold Voltage	1.4V
Turn-Off Delay Time	73ns
Turn-On Delay Time	11ns
DC Rated Voltage	30V
Weight	0.13g
Width	4mm