Dual N-Channel MOSFET, logic level, PWM optimized, with 20V drain-source breakdown voltage and 9.4A continuous drain current. Features 14mΩ maximum drain-source resistance at a nominal Vgs of 1V. This surface mount component offers a 1.5mm height, 5mm length, and 4mm width in a SOIC package, with a maximum power dissipation of 2W. It operates from -55°C to 150°C and includes fast switching characteristics with a 10ns turn-on delay and 16ns fall time.
PackageSOIC
Current Rating9.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6898A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9.4A
Current Rating
9.4A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Element Configuration
Dual
Fall Time
16ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
1.821nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
34ns
Turn-On Delay Time
10ns
DC Rated Voltage
20V
Weight
0.187g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6898A Datasheet
Download the complete datasheet for Onsemi FDS6898A to view detailed technical specifications.
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