Dual N-Channel MOSFET, logic level, PWM optimized, with 20V drain-source breakdown voltage and 9.4A continuous drain current. Features 14mΩ maximum drain-source resistance at a nominal Vgs of 1V. This surface mount component offers a 1.5mm height, 5mm length, and 4mm width in a SOIC package, with a maximum power dissipation of 2W. It operates from -55°C to 150°C and includes fast switching characteristics with a 10ns turn-on delay and 16ns fall time.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Element Configuration | Dual |
| Fall Time | 16ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 1.821nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 20V |
| Weight | 0.187g |
| Width | 4mm |
| RoHS | Compliant |
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