Dual N-Channel MOSFET, logic level, PWM optimized, 20V drain-source breakdown voltage, 9.4A continuous drain current, 14mΩ maximum drain-source on-resistance. Features 1.821nF input capacitance, 10ns turn-on delay, and 34ns turn-off delay. Packaged in SOIC for surface mounting, with a maximum power dissipation of 2W and operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageSOIC
Current Rating9.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6898AZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 14MR |
| Dual Supply Voltage | 20V |
| Element Configuration | Dual |
| Fall Time | 16ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 1.821nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 20V |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6898AZ Datasheet
Download the complete datasheet for Onsemi FDS6898AZ to view detailed technical specifications.
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