Dual N-Channel Logic Level MOSFET, 20V Vds, 7.5A continuous drain current. Features 13mΩ maximum drain-source on-resistance at a nominal 1.8V Vgs. This surface mount device in an SOIC package offers a 1.6W power dissipation and operates across a -55°C to 150°C temperature range. Includes 9ns turn-on delay and 26ns turn-off delay times.
PackageSOIC
Current Rating7.5A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDS6911 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.5A
Current Rating
7.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
13MR
Element Configuration
Dual
Fall Time
5ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.575mm
Input Capacitance
1.13nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
13mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
26ns
Turn-On Delay Time
9ns
DC Rated Voltage
20V
Weight
0.187g
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6911 Datasheet
Download the complete datasheet for Onsemi FDS6911 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.