Dual N-Channel MOSFET for notebook power supply applications. Features 30V drain-source breakdown voltage and 8.6A continuous drain current. Offers low 11mΩ drain-source on-resistance at a nominal Vgs of 1.4V. Packaged in SOIC for surface mounting, with a maximum power dissipation of 2W. Operates across a wide temperature range of -55°C to 150°C.
PackageSOIC
Current Rating8.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6982AS technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.6A
Current Rating
8.6A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
28MR
Fall Time
3ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
610pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1.4V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.9V
Turn-Off Delay Time
24ns
Turn-On Delay Time
12ns
DC Rated Voltage
30V
Weight
0.187g
Width
3.99mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6982AS Datasheet
Download the complete datasheet for Onsemi FDS6982AS to view detailed technical specifications.
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