Dual N-Channel MOSFET for notebook power supply applications. Features 30V drain-source breakdown voltage and 8.6A continuous drain current. Offers low 11mΩ drain-source on-resistance at a nominal Vgs of 1.4V. Packaged in SOIC for surface mounting, with a maximum power dissipation of 2W. Operates across a wide temperature range of -55°C to 150°C.
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Onsemi FDS6982AS technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.6A |
| Current Rating | 8.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28MR |
| Fall Time | 3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.4V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Weight | 0.187g |
| Width | 3.99mm |
| RoHS | Compliant |
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