Dual N-Channel Power MOSFET for notebook power supply applications. Features 30V drain-source breakdown voltage and 8.2A continuous drain current. Offers low 15mΩ drain-source on-resistance at Vgs=10V. Surface mountable in a SOIC package with a maximum power dissipation of 2W. Includes PowerTrench® and SyncFET™ technologies for enhanced performance.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDS6994S datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.2A |
| Current Rating | 8.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21MR |
| Fall Time | 17ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Turn-Off Delay Time | 50ns |
| DC Rated Voltage | 30V |
| Weight | 0.187g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS6994S to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
These are design resources that include the Onsemi FDS6994S
Product Discontinuance Notice P741AAB for legacy Fairchild products including diodes, transistors, and ICs. Final orders due Nov 19, 2017.
