The FDS7079ZN3 is a P-channel MOSFET with a maximum continuous drain current of 16A and a drain to source breakdown voltage of 30V. It has a maximum power dissipation of 3.13W and an operating temperature range of -55°C to 150°C. The device is packaged in a lead-free SOIC package and is RoHS compliant.
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Onsemi FDS7079ZN3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16A |
| Current Rating | -16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 98ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 3.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 64ns |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS7079ZN3 to view detailed technical specifications.
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