P-channel MOSFET with 30V drain-source breakdown voltage and 16A continuous drain current. Features low 7.2mΩ drain-source resistance (Rds On Max) and 2.5W power dissipation. Packaged in an 8-pin SOIC for surface mounting, this component offers fast switching with 20ns turn-on and 55ns fall times. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
PackageSOIC
Current Rating-16A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS7779Z technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16A |
| Current Rating | -16A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.75mm |
| Input Capacitance | 3.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS7779Z Datasheet
Download the complete datasheet for Onsemi FDS7779Z to view detailed technical specifications.
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