N-Channel Power Trench® MOSFET, a single-element surface mount device in an SOIC package. Features 100V drain-to-source breakdown voltage and 3.4A continuous drain current. Offers low on-resistance with a maximum of 105mΩ at a nominal gate-source voltage of 2.9V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Includes fast switching characteristics with turn-on delay of 5ns and fall time of 10ns. Packaged in a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Onsemi FDS86106 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 83mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 208pF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.9V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Rds On Max | 105mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.9V |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.13g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS86106 Datasheet
Download the complete datasheet for Onsemi FDS86106 to view detailed technical specifications.
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