ONSEMI

FDS8812NZ

Datasheet

N-Channel JFET, 30V, 20A, 4mR Rds On, SOIC

Onsemi

FDS8812NZ

Name: FDS8812NZ Onsemi
Brand: Onsemi
SKU: FDS8812NZ

N-Channel JFET, 30V, 20A, 4mR Rds On, SOIC

N-channel JFET, single element configuration, surface mount SOIC package. Features 30V drain-to-source breakdown voltage and 4mΩ drain-to-source on-resistance. Continuous drain current capability of 20A with a maximum power dissipation of 2.5W. Operates within a temperature range of -55°C to 150°C, with a fall time of 12ns and turn-off delay of 55ns. RoHS compliant and lead-free.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power2.5W

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Technical Specifications

Onsemi FDS8812NZ technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	20A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	4mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	4MR
Element Configuration	Single
Fall Time	12ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	6.925nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	4mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	PowerTrench®
Turn-Off Delay Time	55ns
Weight	0.13g