N-Channel PowerTrench® MOSFET, surface mount, SOIC package. Features 30V drain-source breakdown voltage and 15A continuous drain current. Offers a low 7.0mΩ drain-source on-resistance at a nominal gate-source voltage of 1.8V. Includes fast switching characteristics with a 7ns fall time. Maximum power dissipation is 2.5W, operating temperature range from -55°C to 150°C. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS8817NZ technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
7MR
Element Configuration
Single
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Rds On Max
7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.8V
Turn-Off Delay Time
25ns
Turn-On Delay Time
11ns
Weight
0.13g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS8817NZ Datasheet
Download the complete datasheet for Onsemi FDS8817NZ to view detailed technical specifications.
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