N-Channel MOSFET, 30V Vds, 10.2A continuous drain current, and 14mΩ maximum drain-source on-resistance. Features a 2.5W power dissipation, 897pF input capacitance, and operates within a -55°C to 150°C temperature range. This surface-mount component is supplied in a SOIC package on a 2500-piece tape and reel.
PackageSOIC
Current Rating10.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS8878 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
10.2A
Current Rating
10.2A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
14MR
Element Configuration
Single
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
897pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
2.5V
Turn-Off Delay Time
45ns
Turn-On Delay Time
9ns
DC Rated Voltage
30V
Weight
0.13g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS8878 Datasheet
Download the complete datasheet for Onsemi FDS8878 to view detailed technical specifications.
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