Dual N-Channel Power MOSFET, surface mountable in an SOIC package. Features a 30V Drain to Source Breakdown Voltage and 30mΩ Drain to Source Resistance at a nominal Vgs of 670mV. Continuous drain current is rated at 5.5A, with a maximum power dissipation of 2W. Operates across a temperature range of -55°C to 150°C, offering a fall time of 13ns and turn-off delay of 42ns.
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Onsemi FDS8926A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Element Configuration | Dual |
| Fall Time | 13ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 670mV |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 42ns |
| DC Rated Voltage | 30V |
| Weight | 0.2304g |
| RoHS | Not CompliantNo |
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