Dual N-Channel MOSFET, 30V Vdss, 7A continuous drain current. Features 23mΩ maximum drain-source on-resistance at a nominal 1.7V Vgs. Surface mount SOIC package with 1.6W power dissipation. Includes fast switching characteristics with 5ns turn-on delay and 9ns fall time. RoHS compliant and designed for efficient power management.
PackageSOIC
Current Rating7A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDS8984 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
19mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
23MR
Element Configuration
Dual
Fall Time
9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
635pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
1.7V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.7V
Turn-Off Delay Time
42ns
Turn-On Delay Time
5ns
DC Rated Voltage
30V
Weight
0.187g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS8984 Datasheet
Download the complete datasheet for Onsemi FDS8984 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
