Dual N-Channel MOSFET, 30V Vdss, 7A continuous drain current. Features 23mΩ maximum drain-source on-resistance at a nominal 1.7V Vgs. Surface mount SOIC package with 1.6W power dissipation. Includes fast switching characteristics with 5ns turn-on delay and 9ns fall time. RoHS compliant and designed for efficient power management.
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Onsemi FDS8984 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 23MR |
| Element Configuration | Dual |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 635pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 30V |
| Weight | 0.187g |
| Width | 4mm |
| RoHS | Compliant |
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