N-channel JFET, single element, surface mount transistor in SOIC N package. Features 30V drain-to-source breakdown voltage and 7.9A continuous drain current. Offers low 22mΩ drain-to-source resistance (Rds On Max) and 830pF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 5ns fall time and 18ns turn-off delay time.
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| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 7.9A |
| Current Rating | 7.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Turn-Off Delay Time | 18ns |
| DC Rated Voltage | 30V |
| Weight | 0.13g |
| RoHS | Not CompliantNo |
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