
P-Channel MOSFET, single element, surface mount SOIC package. Features 30V drain-source breakdown voltage, 5.3A continuous drain current, and 50mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of -1.7V and a maximum gate-source voltage of 25V. Offers a maximum power dissipation of 2.5W, with fall and turn-off delay times of 9ns and 14ns respectively. Packaged in a 2500-piece tape and reel.
Onsemi FDS9435A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50MR |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 528pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -30V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS9435A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
