P-Channel MOSFET, single element, surface mount SOIC package. Features 30V drain-source breakdown voltage, 5.3A continuous drain current, and 50mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of -1.7V and a maximum gate-source voltage of 25V. Offers a maximum power dissipation of 2.5W, with fall and turn-off delay times of 9ns and 14ns respectively. Packaged in a 2500-piece tape and reel.
PackageSOIC
Current Rating-5.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS9435A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Current Rating
-5.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
50MR
Dual Supply Voltage
-30V
Element Configuration
Single
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Height
1.5mm
Input Capacitance
528pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.7V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-1.7V
Turn-Off Delay Time
14ns
Turn-On Delay Time
7ns
DC Rated Voltage
-30V
Weight
0.13g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS9435A Datasheet
Download the complete datasheet for Onsemi FDS9435A to view detailed technical specifications.
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