Dual N-Channel MOSFET, 20V Vds, 6.5A ID, 30mΩ Rds On Max. Features 2.5V specified PowerTrench® technology for enhanced performance. Surface mount SOIC package with 2500 units per reel. Operating temperature range from -55°C to 150°C, with 2W power dissipation. Includes fast switching times with 8ns turn-on and 15ns turn-off delays.
PackageSOIC
Current Rating6.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS9926A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.5A
Current Rating
6.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
30MR
Dual Supply Voltage
20V
Element Configuration
Dual
Fall Time
4ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
10V
Height
1.5mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
15ns
Turn-On Delay Time
8ns
DC Rated Voltage
20V
Weight
0.187g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS9926A Datasheet
Download the complete datasheet for Onsemi FDS9926A to view detailed technical specifications.
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