N-Channel Power MOSFET featuring 400V drain-source breakdown voltage and 2A continuous drain current. This single element transistor offers a maximum drain-source on-resistance of 3.4 Ohms. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. Key switching characteristics include a 25ns fall time and 10ns turn-on/turn-off delay times.
Onsemi FDU3N40TU technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 3.4R |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 3.4R |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 7.57mm |
| Input Capacitance | 225pF |
| Lead Free | Lead Free |
| Length | 6.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Rds On Max | 3.4R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.34308g |
| Width | 2.5mm |
| RoHS | Compliant |
No datasheet is available for this part.
