The FDU6692 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 30V and a continuous drain current of 54A. The device has a power dissipation of 57W and a gate to source voltage of 16V. The FDU6692 is packaged in a TO-251 case and is RoHS compliant.
PackageTO-251
PolarityN-CHANNEL
Power57W
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Technical Specifications
Onsemi FDU6692 technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 54A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 1800 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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