N-Channel Power MOSFET featuring a 250V drain-source voltage and 4.4A continuous drain current. This UniFET™ device offers a low 1.1Ω drain-source resistance and is housed in a TO-251-3 IPAK package for through-hole mounting. Key switching characteristics include a 34ns fall time, 7ns turn-off delay, and 10ns turn-on delay, with an input capacitance of 250pF. Maximum power dissipation is rated at 50W, operating within a temperature range of -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDU6N25 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 7.57mm |
| Input Capacitance | 250pF |
| Length | 6.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.539g |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDU6N25 Datasheet
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