N-Channel JFET transistor for surface mount applications. Features 25V drain-source breakdown voltage and 680mA continuous drain current. Offers a low drain-source on-resistance of 450mΩ. Operates within a temperature range of -55°C to 150°C. Supplied in a SOT-23 package on a 3000-piece tape and reel.
PackageSOT-23
Voltage20V
Current12A
Current Rating680mA
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Technical Specifications
Onsemi FDV303N technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 680mA |
| Current | 12A |
| Current Rating | 680mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 450mR |
| Dual Supply Voltage | 25V |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.93mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 3ns |
| Voltage | 20V |
| DC Rated Voltage | 25V |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDV303N Datasheet
Download the complete datasheet for Onsemi FDV303N to view detailed technical specifications.
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