The FDV304P_NB8U003 is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 25V and a continuous drain current of 460mA. The device has a maximum power dissipation of 350mW and a drain to source resistance of 1.1 ohms. It is packaged in a TO-236-3 surface mount package and is RoHS compliant.
PackageTO-236-3
MountingSurface Mount
PolarityP-CHANNEL
Power350mW
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Technical Specifications
Onsemi FDV304P_NB8U003 technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 460mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 63pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDV304P_NB8U003 Datasheet
Download the complete datasheet for Onsemi FDV304P_NB8U003 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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