N-Channel MOSFET, 20V Drain-Source Breakdown Voltage, 7.1A Continuous Drain Current. Features 20mΩ Max Drain-Source On-Resistance and 1.6W Max Power Dissipation. Operates with a 12V Gate-Source Voltage and offers a 800mV Threshold Voltage. Packaged in an 8-TSSOP for surface mounting, this RoHS compliant component has a fall time of 84ns and turn-off delay of 41ns.
PackageTSSOP
Current Rating7.1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDW2511NZ technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 7.1A |
| Current Rating | 7.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 84ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 41ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDW2511NZ Datasheet
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