N-channel MOSFET with 30V drain-source breakdown voltage and 8.2A continuous drain current. Features 15mΩ maximum drain-source on-resistance and 1.6W power dissipation. Operates from -55°C to 150°C, with a 12V gate-source voltage. Packaged in an 8-pin TSSOP for surface mounting, supplied on tape and reel.
PackageTSSOP
Current Rating8.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDW2601NZ technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 8.2A |
| Current Rating | 8.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 57ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.84nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 69ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDW2601NZ Datasheet
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