
P-Channel PowerTrench® WL-CSP MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current rating of 3A. Offers a low drain-source on-resistance of 67mΩ at 1.5V specified gate-source voltage. This single-element JFET boasts a maximum power dissipation of 1.9W and operates across a wide temperature range from -55°C to 150°C. Surface mountable with a compact 1.5mm x 1mm x 0.37mm footprint, it is supplied on a 5000-piece tape and reel.
Onsemi FDZ191P technical specifications.
| Continuous Drain Current (ID) | 3A |
| Current Rating | -3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 67mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 85MR |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.37mm |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Length | 1.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -20V |
| Weight | 0.054g |
| Width | 1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDZ191P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
