P-Channel PowerTrench® WL-CSP MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current rating of 3A. Offers a low drain-source on-resistance of 67mΩ at 1.5V specified gate-source voltage. This single-element JFET boasts a maximum power dissipation of 1.9W and operates across a wide temperature range from -55°C to 150°C. Surface mountable with a compact 1.5mm x 1mm x 0.37mm footprint, it is supplied on a 5000-piece tape and reel.
Current Rating-3A
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Onsemi FDZ191P technical specifications.
General
Continuous Drain Current (ID)
3A
Current Rating
-3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
67mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
85MR
Element Configuration
Single
Fall Time
10ns
Gate to Source Voltage (Vgs)
8V
Height
0.37mm
Input Capacitance
800pF
Lead Free
Lead Free
Length
1.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
600mV
Turn-Off Delay Time
50ns
Turn-On Delay Time
11ns
DC Rated Voltage
-20V
Weight
0.054g
Width
1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDZ191P Datasheet
Download the complete datasheet for Onsemi FDZ191P to view detailed technical specifications.
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