P-Channel MOSFET, single element, surface mount, designed for power applications. Features a continuous drain current of 3.7A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 75mΩ at a gate-source voltage of 8V. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact 1mm x 1mm WL-CSP with tape and reel packaging. RoHS compliant.
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| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 88ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.4mm |
| Input Capacitance | 1nF |
| Length | 1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 124ns |
| Turn-On Delay Time | 5.9ns |
| Weight | 0.0684g |
| Width | 1mm |
| RoHS | Compliant |
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Onsemi product discontinuance notice for various semiconductors including MOSFETs, diodes, and IGBTs. Last time buy date: October 8, 2021.
