N-channel Power MOSFET, WLCSP package, 4-pin, surface mount. Features 20V drain-source voltage, 4.7A continuous drain current, and 50mOhm drain-source resistance at 4.5V. Offers typical gate charge of 7nC and input capacitance of 515pF. Operates from -55°C to 150°C with a maximum power dissipation of 1700mW.
PackageWLCSP
MountingSurface Mount
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Technical Specifications
Onsemi FDZ372NZ technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | WLCSP |
| Package Description | Wafer Level Chip Scale Package |
| Lead Shape | Ball |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 1 |
| Package Width (mm) | 1 |
| Package Height (mm) | 0.15 |
| Seated Plane Height (mm) | 0.4(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 4.7A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 515@10VpF |
| Maximum Power Dissipation | 1700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
No datasheet is available for this part.