P-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. Features a continuous drain current of 3.7A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 78mΩ at a gate-source voltage of -500mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.7W. Packaged in a compact 1mm x 1mm WL-CSP for efficient board space utilization.
MountingSurface Mount
PolarityP-CHANNEL
Power1.7W
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Technical Specifications
Onsemi FDZ375P technical specifications.
General
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 143mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.4mm |
| Input Capacitance | 865pF |
| Length | 1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Nominal Vgs | -500mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -500mV |
| Turn-Off Delay Time | 138ns |
| Turn-On Delay Time | 5.3ns |
| Weight | 0.0684g |
| Width | 1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDZ375P Datasheet
Download the complete datasheet for Onsemi FDZ375P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.