P-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. Features a continuous drain current of 3.7A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 78mΩ at a gate-source voltage of -500mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.7W. Packaged in a compact 1mm x 1mm WL-CSP for efficient board space utilization.
MountingSurface Mount
PolarityP-CHANNEL
Power1.7W
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Technical Specifications
Onsemi FDZ375P technical specifications.
General
Continuous Drain Current (ID)
3.7A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
143mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Single
Fall Time
84ns
Gate to Source Voltage (Vgs)
8V
Height
0.4mm
Input Capacitance
865pF
Length
1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Nominal Vgs
-500mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.7W
Radiation Hardening
No
Rds On Max
78mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-500mV
Turn-Off Delay Time
138ns
Turn-On Delay Time
5.3ns
Weight
0.0684g
Width
1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDZ375P Datasheet
Download the complete datasheet for Onsemi FDZ375P to view detailed technical specifications.
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