N-channel Junction Field-Effect Transistor (JFET) with integrated NMOS and Schottky diode. Features 30V Drain to Source Breakdown Voltage (Vdss) and 1.1A Continuous Drain Current (ID). Offers 462mR Drain to Source Resistance (Rds On Max) and 85pF Input Capacitance. Operates within a temperature range of -55°C to 125°C with 1W Power Dissipation. Packaged in a compact 1mm x 1mm WL-CSP 4L for surface mounting, supplied on a 3000-piece tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi FDZ3N513ZT technical specifications.
General
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 462mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2.7ns |
| Forward Current | 1.1A |
| Gate to Source Voltage (Vgs) | 5.5V |
| Height | 0.332mm |
| Input Capacitance | 85pF |
| Length | 1mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Max Repetitive Reverse Voltage (Vrrm) | 25V |
| Max Reverse Current | 300uA |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 462mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 29ns |
| RoHS Compliant | Yes |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 3.1ns |
| Weight | 0.042g |
| Width | 1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDZ3N513ZT Datasheet
Download the complete datasheet for Onsemi FDZ3N513ZT to view detailed technical specifications.
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