P-channel MOSFET featuring a 2.6A continuous drain current and a -20V drain-to-source breakdown voltage. This surface mount device offers a low 140mΩ drain-to-source resistance and a 1.3W power dissipation. Designed with a thin WL-CSP package measuring 0.8mm x 0.8mm x 0.15mm, it operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 4.9ns turn-on delay and a 33ns fall time.
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Onsemi FDZ661PZ technical specifications.
General
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.15mm |
| Input Capacitance | 555pF |
| Lead Free | Lead Free |
| Length | 0.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 4.9ns |
| Weight | 0.067g |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDZ661PZ Datasheet
Download the complete datasheet for Onsemi FDZ661PZ to view detailed technical specifications.
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