PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a -40V Collector Base Voltage (VCBO) and 40V Collector Emitter Breakdown Voltage (VCEO). Offers a maximum collector current of 200mA and a transition frequency of 200MHz. This surface mount component operates within a temperature range of -55°C to 150°C and has a power dissipation of 300mW. Supplied in a 3000-piece tape and reel package.
Frequency200MHz
PackageSC
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Onsemi FFB3906 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
80
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
200MHz
DC Rated Voltage
-40V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FFB3906 Datasheet
Download the complete datasheet for Onsemi FFB3906 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.