The FGA15N120ANDTU is a 1.2kV insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 24A. It has a maximum power dissipation of 200W and is RoHS compliant. The device is packaged in a through-hole package and is available in quantities of 30. The operating temperature range is -55°C to 150°C.
Current Rating15A
MountingThrough Hole
Power200W
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Technical Specifications
Onsemi FGA15N120ANDTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.4V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.2V |
| Current Rating | 15A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 24A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Reverse Recovery Time | 330ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA15N120ANDTU Datasheet
Download the complete datasheet for Onsemi FGA15N120ANDTU to view detailed technical specifications.
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