The FGA180N30DTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 180A. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 480W. The device is packaged in a through-hole configuration and is compliant with RoHS regulations.
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Onsemi FGA180N30DTU technical specifications.
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1.4V |
| Current Rating | 10A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 180A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 480W |
| Reverse Recovery Time | 21ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
| RoHS | Compliant |
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