The FGA30N65SMD is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 60A. It can handle a maximum power dissipation of 300W and operates within a temperature range of -55°C to 175°C. The transistor is packaged in a flange mount with a weight of 6.401g and dimensions of 20.1mm in height, 16.2mm in length, and 5mm in width. The FGA30N65SMD is RoHS compliant and is available in a package quantity of 30 in a rail/Tube packaging.
MountingThrough Hole
Power300W
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Technical Specifications
Onsemi FGA30N65SMD technical specifications.
General
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.29V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Length | 16.2mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA30N65SMD Datasheet
Download the complete datasheet for Onsemi FGA30N65SMD to view detailed technical specifications.
No datasheet is available for this part.
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