The FGA30N65SMD is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 60A. It can handle a maximum power dissipation of 300W and operates within a temperature range of -55°C to 175°C. The transistor is packaged in a flange mount with a weight of 6.401g and dimensions of 20.1mm in height, 16.2mm in length, and 5mm in width. The FGA30N65SMD is RoHS compliant and is available in a package quantity of 30 in a rail/Tube packaging.
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| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.29V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Length | 16.2mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Weight | 6.401g |
| Width | 5mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FGA30N65SMD
onsemi product discontinuance notice PD23762Z for various standard parts. Last time buy date is July 29, 2021, and last ship date is January 29, 2022.
