Insulated Gate Bipolar Transistor (IGBT) with 650V Collector Emitter Breakdown Voltage and 40A continuous collector current. Features a low 2.5V Collector Emitter Saturation Voltage and 349W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Includes a 42ns reverse recovery time and 12ns turn-on delay. Packaged in a rail/tube for through-hole mounting, with 450 units per package.
MountingThrough Hole
Power349W
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Technical Specifications
Onsemi FGA40N65SMD technical specifications.
General
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.2mm |
| Max Breakdown Voltage | 650V |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 349W |
| Mount | Through Hole |
| Package Quantity | 450 |
| Packaging | Rail/Tube |
| Power Dissipation | 349W |
| Radiation Hardening | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 12ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA40N65SMD Datasheet
Download the complete datasheet for Onsemi FGA40N65SMD to view detailed technical specifications.
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