Insulated Gate Bipolar Transistor (IGBT) with 650V Collector Emitter Breakdown Voltage and 40A continuous collector current. Features a low 2.5V Collector Emitter Saturation Voltage and 349W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Includes a 42ns reverse recovery time and 12ns turn-on delay. Packaged in a rail/tube for through-hole mounting, with 450 units per package.
MountingThrough Hole
Power349W
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Technical Specifications
Onsemi FGA40N65SMD technical specifications.
General
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
650V
Collector-emitter Voltage-Max
2.5V
Height
20.1mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.2mm
Max Breakdown Voltage
650V
Max Collector Current
80A
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
349W
Mount
Through Hole
Package Quantity
450
Packaging
Rail/Tube
Power Dissipation
349W
Radiation Hardening
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
92ns
Turn-On Delay Time
12ns
Weight
6.401g
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FGA40N65SMD Datasheet
Download the complete datasheet for Onsemi FGA40N65SMD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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