The FGA60N65SMD is a 650V insulated gate bipolar transistor with a maximum collector current of 120A and a maximum power dissipation of 600W. It is designed for through hole mounting in a flange mount package. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The FGA60N65SMD features a reverse recovery time of 47ns and a turn-off delay time of 104ns.
MountingThrough Hole
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Technical Specifications
Onsemi FGA60N65SMD technical specifications.
General
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Collector Current | 120A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 47ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 104ns |
| Turn-On Delay Time | 18ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA60N65SMD Datasheet
Download the complete datasheet for Onsemi FGA60N65SMD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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